Silicon carbide Power MOSFET
SCT30N120
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., TJ = 150 °C) in an HiP247™ package
Datasheet - produc...
Description
SCT30N120
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., TJ = 150 °C) in an HiP247™ package
Datasheet - production data
Features
Very tight variation of on-resistance vs. temperature
Very high operating junction temperature capability (TJ = 200 °C)
Very fast and robust intrinsic body diode Low capacitance
Applications
Figure 1: Internal schematic diagram
Solar inverters, UPS Motor drives High voltage DC-DC converters Switch mode power supply
D(2, TAB)
G(1)
S(3)
AM01475v1_noZen
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for highefficiency and high power density applications.
Table 1: Device summary
Order code
Marking
Package
Packaging
SCT30N120
SCT30N120
HiP247™
Tube
May 2017
DocID023109 Rev 11
This is information on a product in full production.
1/13
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Contents
Contents
SCT30N120
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics .........................
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