2SK1516

2SK1515, 2SK1516 Silicon N Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) G 1 2 3 REJ03G0946-0200 (Previous: ADE-208-1286) Rev.2.00 Sep 07, 2005 D 1. Gate 2. Drain (Flange) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1515, 2SK1516 Absolute Maximum Ratings Item Drain to source voltage 2SK1515 2SK1516 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 450 500 ±30 10 30 10 100 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C Electrical Characteristics Item Drain to source 2SK1515 breakdown voltage 2SK1516 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain 2SK1515 current 2SK1516 Gate to source cutoff voltage Static drain to source on 2SK1515 state resistance 2SK1516 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbo...