isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=4.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS=900 (Min) ·Mi...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current –ID=4.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS=900 (Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VALUE
UNI T
900
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
4.5
A
Ptot
Total Dissipation@TC=25℃
60
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SK1463
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=2A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=900V; VGS= 0
VSD
Diode Forward Voltage
IF=4.5A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=2A;RL=50Ω
toff
Turn-off time
2SK1463
MIN TYP MAX UNIT
900
V
2.0
3.0
V
2.8
3.6
Ω
±100 nA
1
mA
1.8
V
35
ns
50
ns
65
ns
265
ns
Notice: ISC reserves the rights to make changes of the content herein the datasheet at any ti...