DAP222

Transys Electronics LIMITED SOT-523 Plastic-Encapsulated Diode DAP222 SWITCHING DIODE FEATURES: Power dissipation PD: 150 mW (Tamb=25℃) Collector current IF: 100 mA Collector-base voltage VR: 80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ CIRCUIT: SOT-523 1 3 2 MARKING: P ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) IR Test conditions IR= 100µA VR=70V MIN MAX 80 0.1 Forward voltage VF IF=100mA 1.2 Diode capacitance Reverse recovery time CD VR=6V, f=1MHz trr VR=6V, IF=5mA 3.5 4 UNIT V µA V pF ns ...