SWITCHING DIODE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diode
DAN222 SWITCHING DIODE
FEATURES:
z...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diode
DAN222 SWITCHING DIODE
FEATURES:
z Four types of packaging are available z High speed z Suitable for high packing density layout z High reliability
MARKING: N
SOT-523
1 3
2
NN
Solid dot = Green molding compound device,if none,the normal device.
Maximum Ratings @Ta=25℃
Parameter Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Average Rectified Output Current Power Dissipation Thermal resistance From Junction to ambient Junction Temperature Storage Temperature Range
Symbol VRM VR IFM
IFSM IO PD RθJA
TJ TSTG
Limit 80 80 300
2.0 100 150 833 150 -55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time
Symbol V(BR) IR VF CD trr
Test conditions IR= 100μA VR=70V IF=100mA
VR=0, f=1MHz VR=6V, IF=IR=5mA
Min Max 80
0.1 1.2 3.5 4
Unit V V
mA A mA mW ℃/W ℃ ℃
Unit V μA
V
pF ns
www.cj-elec.com
1
B,Oct,2014
REVERSE CURRENT I (nA) R
FORWARD CURRENT I (mA) F
T a
=100℃
Typical Characteristics
Forward Characteristics
300 100
10
1
T a
=25℃
10000 1000 100 10
Reverse Characteristics
T =100℃ a
T =25℃ a
0.1 0.0
0.4 0.8 1.2
FORWARD VOLTAGE V (V) F
1.6
1 0 20 40 60 80
REVERSE VOLTAGE V (V) R
CAPACITANCE BETWEEN TERMINALS C (pF)
T
POWER DISSIPATION P (mW) D
Capacitance ...
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