DAN217U

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode DAN217U SWITCHING DIODE SOT-323 FEATURES z Small surface mounting type z Two diode elements are connected in series MARKING:A7 A7 A7 Solid dot = Green molding compound device, if none,the normal device. 1 2 3 Maximum Ratings @Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Average Rectified Output Current Power Dissipation Thermal resistance From Junction to ambient Junction Temperature Storage Temperature Range Symbol VRM VR IFM IFSM IO PD RθJA TJ TSTG Limit 80 80 300 2.0 100 200 625 150 -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reversen voltage leakage current Forward voltage Symbol V(BR) IR VF Test conditions IR= 100μA VR=70V IF=100mA Min Max 80 0.2 1.2 Unit V V mA A mA mW ℃/W ℃ ℃ Unit V μA V www.cj-elec.com 1 B,Oct,2014 FORWARD CURRENT IF (mA) Ta=100℃ Ta=25℃ REVERSE CURRENT IR (nA) Typical Characteristics Forward Characteristics 100 30 10 3 1 0.3 0.1 0.0 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE VF (V) 1.2 1000 300 100 30 10 3 1 0 Reverse Characteristics Ta=100℃ Ta=25℃ 20 40 60 REVERSE VOLTAGE VR (V) 80 CAPACITANCE BETWEEN TERMINALS CT (pF) POWER DISSIPATION PD (mW) Capacitance Characteristics 1.4 Ta=25℃ f=1MHz 1.3 1.2 1.1 1.0 0 5 10 15 20 REVERSE VOLTAGE VR (V) 300 250 200 150 100 50 0 0 ...