DA227

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Diodes DA227 SWITCHING DIODE FEATURES z High speed z Suitable for high packing density layout z High reliability MARKING: N20 SOT-353 54 123 Maximum Ratings @Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Average Rectified Output Current Power Dissipation Thermal resistance From Junction to ambient Junction Temperature Storage Temperature Range Symbol VRM VR IFM IFSM IO PD RθJA TJ TSTG Limit 80 80 300 2.0 100 200 625 150 -55~+150 Unit V V mA A mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time Symbol V(BR) IR VF CD trr Test conditions IR= 100μA VR=70V IF=100mA VR=6V, f=1MHz VR=6V, IF=5mA Min 80 Max 0.1 1.2 3.5 4 Unit V μA V pF ns www.cj-elec.com 1 C,Mar,2016 FORWARD CURRENT I (mA) F Typical Characteristics Forward Characteristics 100 Ta=100℃ 10 Ta=25℃ 1 0.1 0.2 1.2 1.1 0.4 0.6 0.8 FORWARD VOLTAGE V (V) F 1.0 Capacitance Characteristics T =25℃ a f=1MHz CAPACITANCE BETWEEN TERMINALS C (pF) T 1.0 0.9 0 4 8 12 16 20 REVERSE VOLTAGE V (V) R POWER DISSIPATION P (W) D REVERSE CURRENT I (nA) R Reverse Characteristics 10000 1000 100 Ta=100℃ 10 Ta=25℃ 1 0.1 250 1 10 REVERSE VOLTAGE V (V) R Power Derating Curve 80 200 150 ...