2SK1342

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35 ℃/W 2SK1342 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK1342 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0 VSD Diode Forward Voltage IF=8A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=4A;RL=7.5Ω toff Turn-off time MIN TYP MAX UNIT 900 V 2.0 3.0 V 1.2 1.6 Ω ±10 uA 250 uA 0.9 V 135 ns 160 ns 130 ns 315 ns Notice： ISC ...