2SK1277

isc N-Channel MOSFET Transistor 2SK1277 DESCRIPTION ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 250 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 30 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT th j-c Thermal Resistance,Junction to Case 0.83 ℃/W th j-a Thermal Resistance,Junction to Ambient 35 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK1277 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=10mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=15A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=250V; VGS= 0 VSD Diode Forward Voltage IF=30A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=30A;RL=25Ω toff Turn-off time MIN TYP MAX UNIT 250 V 2.1 3.0 4.0 V 0.09 0.12 Ω ±100 nA 500 uA 0.9 1.8 V 140 210 ns 175 260 ns 180 270 ns 600 900 ns Notice：...