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1SS400

JCET

High Speed Switching Diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS400 High Speed Switching Diode...


JCET

1SS400

File Download Download 1SS400 Datasheet


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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS400 High Speed Switching Diode FEATURES z Small surface mounting type z High speed z High reliability with high surge current handing capability MARKING:A A A The marking bar indicates the cathode Solid dot = Green molding compound device, if none,the normal device. SOD-523 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature VRM VR IFM IO IFSM Pd RθJA Tj TSTG 90 80 225 100 2.0 150 833 150 -55~+150 Unit V V mA mA A mW ℃/W ℃ ℃ Electrical Ratings @Ta=25℃ Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol Min. Typ. Max. Unit Conditions VF 1.2 V IF=100mA IR 0.1 μA VR=80V CT 3.0 pF VR=0.5V, f=1MHz trr 4 ns VR=6V,IF=10mA,RL=100 Ω www.cj-elec.com 1 C,Mar,2015 FORWARD CURRENT IF (mA) Ta=100℃ Ta=25℃ REVERSE CURRENT IR (nA) Typical Characteristics Forward Characteristics 100 10 1 0.1 0.01 0.0 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE VF (V) 1.2 1000 100 10 1 0 Reverse Characteristics Ta=100℃ Ta=25℃ 20 40 60 REVERSE VOLTAGE VR (V) 80 CAPACITANCE BETWEEN TERMINALS CT (pF) POWER DISSIPATION PD (mW) Capacitance Charac...




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