High Speed Switching Diode
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
1SS400 High Speed Switching Diode...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
1SS400 High Speed Switching Diode
FEATURES
z Small surface mounting type z High speed z High reliability with high surge current handing capability
MARKING:A
A
A
The marking bar indicates the cathode Solid dot = Green molding compound device,
if none,the normal device.
SOD-523
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Limit
Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature
VRM VR IFM IO IFSM Pd
RθJA Tj
TSTG
90
80
225 100 2.0 150
833 150 -55~+150
Unit V V
mA mA A mW ℃/W ℃ ℃
Electrical Ratings @Ta=25℃ Parameter
Forward voltage Reverse current Capacitance between terminals Reverse recovery time
Symbol Min. Typ. Max. Unit
Conditions
VF
1.2 V
IF=100mA
IR
0.1 μA
VR=80V
CT
3.0 pF
VR=0.5V, f=1MHz
trr 4 ns VR=6V,IF=10mA,RL=100 Ω
www.cj-elec.com
1
C,Mar,2015
FORWARD CURRENT IF (mA) Ta=100℃
Ta=25℃ REVERSE CURRENT IR (nA)
Typical Characteristics
Forward Characteristics
100
10
1
0.1
0.01 0.0
0.2 0.4 0.6 0.8 1.0
FORWARD VOLTAGE VF (V)
1.2
1000 100 10 1 0
Reverse Characteristics
Ta=100℃
Ta=25℃
20 40 60
REVERSE VOLTAGE VR (V)
80
CAPACITANCE BETWEEN TERMINALS CT (pF)
POWER DISSIPATION PD (mW)
Capacitance Charac...
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