1SS370

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode 1SS370 SWITCHING DIODE FEATURES z High voltage, high speed switching applications z Low forward voltage z Fast reverse recovery time z Small total capacitance MAKING: F5 SOT-323 1 2 F5 F5 Solid dot = Green molding compound device, if none,the normal device. 3 Maximum Ratings @Ta=25℃ Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Non-Repetitive Peak Forward Surge current@t=8 .3ms Junction temperature Storage temperature Symbol VRM VR IFM IO IFSM Tj Tstg Limit 250 200 300 100 2.0 150 -55~+150 Unit V V mA mA A ℃ ℃ Electrical Ratings @Ta=25℃ Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol VF IR CT trr Min Typ 60 Max 1 1.2 0.1 1 3.0 Unit V V μA μA pF ns Conditions IF=10mA IF=100mA VR=50V VR=200V VR=0, f=1MHZ VR=6V,IF=10mA,Irr=0.1*IR www.cj-elec.com 1 C,Oct,2014 Typical Characteristics Forward Characteristics 100 =100℃ =25℃ T a FORWARD CURRENT I (mA) F 10 1 T a 0.1 0.01 0.0 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE V (V) F 1.2 REVERSE CURRENT I (nA) R 1000 100 10 1 0 Reverse Characteristics T =100℃ a T =75℃ a T =25℃ a 50 100 150 200 REVERSE VOLTAGE V (V) R 250 CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATION P (mW) D Capacitance Characteristics Per Diode 2.50 T =25℃ a f=1MHz 1.5 1.0 0.5 0.0 0 4 8 12 16 20 REVERSE VOLTAGE V (V) R Power Derating Curve 125 10...