1SS196

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS196 Switching Diode FEATURES Low forward voltage Fast reverse recovery time MARKING: G3 G3 SOT-23 1 3 2 Maximum Ratings @Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Symbol VRM VR IFM IO IFSM PD RθJA TJ TSTG Limit 85 80 300 100 2.0 150 833 150 -55~+150 Unit V V mA mA A mW ℃/W ℃ ℃ Electrical Characteristics @Ta=25℃ Parameter Symbol Reverse breakdown voltage V(BR) VF1 Forward voltage Reverse current VF2 VF3 IR1 IR2 Capacitance between terminals CT Reverse recovery time t rr www.cj-elec.com Min Typ Max Unit Conditions 80 V IR=100µA 0.60 V IF=1mA 0.72 0.90 1.2 0.1 V IF=10mA V IF=100mA uA VR=30V 0.5 uA VR=80V 0.9 3.0 pF VR=0,f=1MHz 1.6 4.0 ns IF=IR=10mA,Irr=0.1×IR 1 B,Aug,2014 FORWARD CURRENT IF (mA) Ta=100℃ Ta=25℃ REVERSE CURRENT IR (nA) Typical Characteristics 100 30 10 3 1 0.3 0.1 0.03 0.01 0.0 Forward Characteristics 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE VF (V) 1.2 1000 300 100 30 10 3 1 0 Reverse Characteristics Ta=100℃ Ta=25℃ 20 40 60 REVERSE VOLTAGE VR (V) 80 CAPACITANCE BETWEEN TERMINALS CT (pF) POWER DISSIPATION PD (mW) Capacitance Characteristics 1.2 Ta=25℃ f=1MHz 1.1 1.0 0.9 0.8 0 5 10 15 20 ...