1SS193

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS193 Switching Diode FEATURES y Low forward voltage y Fast reverse recovery time MARKING: F3 F3 F3 SOT-23 1 3 2 Solid dot = Green molding compound device,if none,the normal device. Maximum Ratings @Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Symbol VRM VR IFM IO IFSM PD RθJA TJ TSTG Limit 85 80 300 100 2.0 150 833 150 -55~+150 Unit V V mA mA A mW ℃/W ℃ ℃ Electrical Characteristics @Ta=25℃ Parameter Reverse breakdown voltage Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol Min Typ Max Unit Conditions V(BR) 80 V IR=100μA VF1 0.60 V IF=1mA VF2 0.72 V IF=10mA VF3 0.90 1.2 V IF=100mA IR1 0.1 uA VR=30V IR2 0.5 uA VR=80V CT 0.9 3.0 pF VR=0,f=1MHz t rr 1.6 4.0 ns IF=IR=10mA,Irr=0.1×IR www.cj-elec.com 1 B,Aug,2014 FORWARD CURRENT I (mA) F Ta=100℃ Ta=25℃ REVERSE CURRENT I (nA) R Typical Characteristics Forward Characteristics 100 30 10 3 1 0.3 0.1 0.03 0.01 0.0 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE V (V) F 1.2 1000 300 100 30 10 3 1 0 Reverse Characteristics Ta=100℃ Ta=25℃ 20 40 60 REVERSE VOLTAGE V (V) R 80 CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATION P (mW...