SILICON EPITAXIAL PLANAR DIODE
Certificate TH97/10561QM
Certificate TW00/17276EM
1SS184
PRV : 85 Volts Io : 100 mA
FEATURES :
* Small package * Low f...
Description
Certificate TH97/10561QM
Certificate TW00/17276EM
1SS184
PRV : 85 Volts Io : 100 mA
FEATURES :
* Small package * Low forward voltage * Fast reverse recovery time * Small total capacitance * Ultra high speed switching application * Pb / RoHS Free
SILICON EPITAXIAL PLANAR DIODE SOT-23
0.19 0.08
1.40 0.95 0.50 0.35
0.100 0.013
3.10 2.70
3 1
2
2.04 1.78
1.02 0.89
3
1.65 1.20 3.0 2.2
MECHANICAL DATA :
* Case : SOT-23 plastic Case * Marking Code : B3
12
Dimensions in millimeters
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (Ta =25 °C)
Parameter
Maximum Peak Reverse Voltage Reverse Voltage Maximum Peak Forward Current Average Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range
Symbol
VRM VR IFM IF(AV) IFSM Ptot TJ TSTG
Value
85 80 300 100 2 150 125 -55 to +125
Unit
V V mA mA A mW °C °C
ELECTRICAL CHARACTERISTICS (Ta =25 °C)
Parameter
Forward Voltage
Reverse Current Total Capacitance Reverse Recovery Time
Test Condition
IF = 1 mA IF = 10 mA IF = 100 mA VR = 30 V VR = 80 V VR = 0 V, f = 1 MHz IR = 10 mA
Symbol
VF
IR CT Trr
Min.
-
TYP
0.6 0.72 0.9
0.9 1.6
Max.
1.2 0.1 0.5 3 4
Unit
V
µA pF ns
Page 1 of 2
Rev. 01 : September 20, 2006
FORWARD CURRENT, (mA)
Certificate TH97/10561QM
Certificate TW00/17276EM
RATINGS AND CHARACTERISTIC CURVES ( 1SS184 )
FIG.1 - FORWARD CURRENT VS. FORWARD VOLTAGE
200 100
10 Ta = 100 °C
1
Ta = 25 °C 0.1
0.01 0
0.2 0.4 0.6 0.8
FORWARD VOLTAGE, (V)
1.0
FIG.3 - TOTAL CAPACIT...
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