SWITCHING DIODE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
1SS184 Switching Diode
FEATURES y ...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
1SS184 Switching Diode
FEATURES y Low forward voltage y Fast reverse recovery time
MARKING: B3
B3 B3
SOT-23
1 3
2
Solid dot = Green molding compound device,if none,the normal device.
Maximum Ratings @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range
Symbol
VRM VR IFM IO IFSM PD RθJA TJ TSTG
Limit
85 80 300 100 2.0 150 833 150 -55~+150
Unit
V V mA mA A mW ℃/W ℃ ℃
Electrical Characteristics @Ta=25℃
Parameter Reverse breakdown voltage
Forward voltage
Reverse current Capacitance between terminals Reverse recovery time
Symbol V(BR) VF1 VF2 VF3 IR1 IR2 CT t rr
Min Typ Max Unit
Conditions
80 V IR=100μA
0.60
V IF=1mA
0.72 0.9 1.2
0.1
V IF=10mA V IF=100mA uA VR=30V
0.5 uA VR=80V
0.9 3.0 pF VR=0,f=1MHz
1.6 4.0 ns IF=IR=10mA,Irr=0.1×IR
www.cj-elec.com
1
B,Aug,2014
FORWARD CURRENT IF (mA) Ta=100℃
Ta=25℃ REVERSE CURRENT IR (nA)
Typical Characteristics
Forward Characteristics
100
30 10
3 1
0.3 0.1
0.03 0.01
0.0
0.2 0.4 0.6 0.8 1.0
FORWARD VOLTAGE VF (V)
1.2
1000 300 100 30 10 3 1 0
Reverse Characteristics
Ta=100℃
Ta=25℃
20 40 60
REVERSE VOLTAGE VR (V)
80
CAPACITANCE BETWEEN TERMINALS CT (pF)
POWER DISSIPATION PD (mW)
Capacitance C...
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