1N4448WS

1N4448WS SILICON EPITAXIAL PLANAR DIODE Fast Switching Diode Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Average Rectified Output Current Forward Continuous Current Non-Repetitive Peak Forward Surge Current (at t = 1 µs) Power Dissipation Junction Temperature Storage Temperature Range PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Symbol VRM VR IO IFM IFSM Pd Tj Tstg Value 100 80 150 300 0.5 200 150 - 65 to + 150 Unit V V mA mA A mW OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 5 mA at IF = 10 mA at IF = 100 mA at IF = 150 mA Reverse Leakage Current at VR = 80 V at VR = 20 V at VR = 75 V, TJ = 150 OC at VR = 25 V, TJ = 150 OC Reverse Breakdown Voltage at IR = 100 µA Capacitance at VR = 0.5 V, f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, Irr = 0.1 X IR , RL = 100 Ω Symbol VF IR V(BR)R Ctot trr Min. 0.62 - - 80 - - Max. 0.72 0.855 1 1.25 100 25 50 30 - 4 4 Unit V nA nA µA µA V pF ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/04/2009 1N4448WS SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/04/2009 1N4448WS PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A E bp c HE DA UNIT A ...