Document
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
CHM6031LPAPT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts CURRENT 55 Ampere
APPLICATION
* Servo motor control. * Power MOSFET gate drivers. * Other switching applications.
FEATURE
* Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability.
CONSTRUCTION
* N-Channel Enhancement
.280 (7.10) .238 (6.05) .220 (5.59) .195 (4.95)
(1) (3) (2)
TO-252A
.094 (2.40) .087 (2.20)
.035 (0.89) .018 (0.45)
.261 (6.63) .213 (5.40) .417 (10.6) .346 (8.80)
CIRCUIT
D (3)
(1) G
S (2)
Absolute Maximum Ratings
Symbol Parameter
VDSS
Drain-Source Voltage
TA = 25°C unless otherwise noted
VGSS
Gate-Source Voltage
Maximum Drain Current - Continuous ID
- Pulsed (Note 3)
PD Maximum Power Dissipation at Tc = 25 °C
TJ Operating Temperature Range
TSTG Storage Temperature Range
Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
.035 (0.90) .025 (0.64)
.102 (2.59) .078 (1.98)
1 Gate 2 Source 3 Drain( Heat Sink )
.024 (0.61) .016 (0.40)
Dimensions in inches and (millimeters)
TO-252A
CHM6031LPAPT 30
±20
55 140 50 -55 to 150 -55 to 150
Units V V
A
W °C °C
50 °C/W
2006-02
RATING CHARACTERISTIC CURVES ( CHM6031LPAPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current
I GSSF I GSSR
Gate-Body Leakage Gate-Body Leakage
VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V
30 V
1 µA
+100 -100
nA nA
ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance
g FS Forward Transconductance
VDS = VGS, ID = 250 µA VGS=10V, ID=5A VGS=4.5V, ID=5A VDS =10V, ID = 26A
1 1.6 3
V
8.5 11 mΩ
12 15
32 S
SWITCHING CHARACTERISTICS (Note 4)
Qg Total Gate Charge Qgs Gate-Source Charge Q gd Gate-Drain Charge ton Turn-On Time tr Rise Time toff Turn-Off Time tf Fall Time
VDS=24V, ID=48A VGS=5V
VDD= 15V ID =55A, VGS= 10 V RGEN= 24 Ω
27 33 6 14 10 16 190 250 55 90 130 200
nC nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage IS = 26A, VGS= 0 V
55 0.93 1.3
A V
.