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CHM6031LPAPT Dataheets PDF



Part Number CHM6031LPAPT
Manufacturers Chenmko Enterprise
Logo Chenmko Enterprise
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet CHM6031LPAPT DatasheetCHM6031LPAPT Datasheet (PDF)

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHM6031LPAPT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 55 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. CONSTRUCTION * N-Channel Enhancement .280 (7.10) .238 (6.05) .220 (5.59) .195 (4.95) (1) (3) (2) TO-252A .094 (2.40) .0.

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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHM6031LPAPT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 55 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. CONSTRUCTION * N-Channel Enhancement .280 (7.10) .238 (6.05) .220 (5.59) .195 (4.95) (1) (3) (2) TO-252A .094 (2.40) .087 (2.20) .035 (0.89) .018 (0.45) .261 (6.63) .213 (5.40) .417 (10.6) .346 (8.80) CIRCUIT D (3) (1) G S (2) Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage TA = 25°C unless otherwise noted VGSS Gate-Source Voltage Maximum Drain Current - Continuous ID - Pulsed (Note 3) PD Maximum Power Dissipation at Tc = 25 °C TJ Operating Temperature Range TSTG Storage Temperature Range Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) .035 (0.90) .025 (0.64) .102 (2.59) .078 (1.98) 1 Gate 2 Source 3 Drain( Heat Sink ) .024 (0.61) .016 (0.40) Dimensions in inches and (millimeters) TO-252A CHM6031LPAPT 30 ±20 55 140 50 -55 to 150 -55 to 150 Units V V A W °C °C 50 °C/W 2006-02 RATING CHARACTERISTIC CURVES ( CHM6031LPAPT ) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current I GSSF I GSSR Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V 30 V 1 µA +100 -100 nA nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS Forward Transconductance VDS = VGS, ID = 250 µA VGS=10V, ID=5A VGS=4.5V, ID=5A VDS =10V, ID = 26A 1 1.6 3 V 8.5 11 mΩ 12 15 32 S SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Qgs Gate-Source Charge Q gd Gate-Drain Charge ton Turn-On Time tr Rise Time toff Turn-Off Time tf Fall Time VDS=24V, ID=48A VGS=5V VDD= 15V ID =55A, VGS= 10 V RGEN= 24 Ω 27 33 6 14 10 16 190 250 55 90 130 200 nC nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage IS = 26A, VGS= 0 V 55 0.93 1.3 A V .


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