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CL-1CL3

KODENSHI KOREA CORP

Infrared Emitting Diodes(GaAlAs)

Infrared Emitting Diodes(GaAlAs) K O D E N S H I CL-1CL3 DIMENSIONS The CL-1CL3 is a high-power GaAlAs IRED mounted in...


KODENSHI KOREA CORP

CL-1CL3

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Description
Infrared Emitting Diodes(GaAlAs) K O D E N S H I CL-1CL3 DIMENSIONS The CL-1CL3 is a high-power GaAlAs IRED mounted in a 3©™ ceramic package. The output power is so high compared to GaAs IREDs. (Unit : mm) FEATURES ¶UCompact (©™ 3mm) ¶UWide beam angle ¶U Low-cost APPLICATIONS ¶UFloppy disk drives ¶UOptical switches ¶UOptical readers MAXIMUM RATINGS Item Reverse voltage Forward current *1 Pulse forward current Power dissipation Operating temp. Storage temp. *2 Soldering temp. (Ta=2°…) 5 Symbol VR F I FP I PD Topr. Tstg. Tsol. Rating 4 60 0.5 90 -20~+70 -30~+80 240 Unit V mA A mW °… °… °… *1. pulse width £∫tw =100 sec.period Ï £∫ T=10msec. *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle (Ta=2° 5…) Symbol VF R I Ct PO Îp ƒÎ °‚Ë Conditions F=40mA I VR=4V f=1MHz F=40mA I F=40mA I F=40mA I Min. Typ. 20 3.6 880 50 °æ 53 Max. 1.5 10 Unit. V Ï A pF mW/sr nm nm deg. - 1- Infrared Emitting Diodes(GaAlAs) CL-1CL3 Power dissipation Vs. Ambient temperature Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Relative intensity Vs. Wavelength Forward current Vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2- ...




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