Document
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD2027
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1346
APPLICATIONS ·Designed for low frequency and general purpose
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
60 V
VCEO Collector-Emitter Voltage
60 V
wwwVEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
3A
ICM Collector Current-Peak
Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃
TJ Junction Temperature
Tstg Storage Temperature
8A
1.75 W
30
150 ℃
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD2027
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
60
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
60 V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.2A
1.0 V
VBE(on) Base-Emitter On Voltage
IC= 0.5A; VCE= 5V
1.0 V
ICBO Collector Cutoff Current
VCB= 40V; IE=0
100 μA
IEBO Emitter Cutoff Current
i.cnhFE-1
DC Current Gain
.iscsemhFE-2
DC Current Gain
wwwCOB Output Capacitance
VEB= 4V; IC=0 IC= 0.5A; VCE= 5V IC= 3A ; VCE= 5V IE= 0; VCB= 10V, f= 1MHz
100 μA 70 280 20
60 pF
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 5V
8 MHz
hFE-1 Classifications QRS
70-140 100-200 140-280
isc Website:www.iscsemi.cn
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