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D2027 Dataheets PDF



Part Number D2027
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description 2SD2027
Datasheet D2027 DatasheetD2027 Datasheet (PDF)

INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Power Transistor isc Product Specification 2SD2027 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1346 APPLICATIONS ·Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE UNIT .iscsemVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V .

  D2027   D2027


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INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Power Transistor isc Product Specification 2SD2027 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1346 APPLICATIONS ·Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE UNIT .iscsemVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V wwwVEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 3A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 8A 1.75 W 30 150 ℃ -55~150 ℃ isc Website:www.iscsemi.cn INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Power Transistor isc Product Specification 2SD2027 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.2A 1.0 V VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 5V 1.0 V ICBO Collector Cutoff Current VCB= 40V; IE=0 100 μA IEBO Emitter Cutoff Current i.cnhFE-1 DC Current Gain .iscsemhFE-2 DC Current Gain wwwCOB Output Capacitance VEB= 4V; IC=0 IC= 0.5A; VCE= 5V IC= 3A ; VCE= 5V IE= 0; VCB= 10V, f= 1MHz 100 μA 70 280 20 60 pF fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 5V 8 MHz ‹ hFE-1 Classifications QRS 70-140 100-200 140-280 isc Website:www.iscsemi.cn 2 .


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