CHR2291
12-17GHz Integrated Down Converter
GaAs Monolithic Microwave IC Description
The CHR2291 is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide range of applications, typically commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
LO
Q GM GB VDM VDL GX VGA RF
I
Main Features • • • • • • •
14
Typical on wafer measurement: Conversion Gain & Image suppression @ IF=1& 1.5GHz
12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 11,0 12,0 13,0 14,0 15,0 16,0 17,0 18,0
Broadband performances : 12-17GHz 10 dB conversion gain 3.5dB noise figure -8dBm RF input power (1dB gain comp.) Low DC power consumption,
[email protected] Chip size : 2.49 X 2.13 X 0.10 mm
(dB)
2LO Frequency
10dBm LO input power
RF Frequency (GHz)
Main Characteristics
Tamb. = 25°C Parameter Min Typ Max Unit
FRF FLO FIF Gc
RF frequency range LO frequency range IF frequency range Conversion gain
12 5.25 0.25 +10
17 7.75 1.5
GHz GHz GHz dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHR22912218 06-Aug.-02 1/6 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
12-17GHz Integrated Down Converter
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.5V ,Idl=50mA, Idm=50mA Symbol
FRF FLO FIF Gc NF PLO Img Sup P1dB
CHR2291
Parameter
RF frequency range LO frequency range IF frequency range Conversion gain (1) Noise Figure (1) LO Input power Image Suppression Input power at 1dB gain compression
Min
12 5.25 0.25
Typ
Max
17 7.75 1.5
Unit
GHz GHz GHz dB dB dBm dBc dBm
+10 3.5 +10 15 -8 2.0:1 2.0:1 100
LO VSWR Input LO VSWR (1) RF VSWR Input RF VSWR (1) Id Bias current (2)
mA
(1) On Wafer measurements (2) Current source biasing network is recommended. Optimum performances for Idm= 50mA and Idl= 50mA
Absolute Maximum Ratings
Tamb. = 25°C (1) Symbol
Vd Id Vg Vdg Pin Tch Ta Tstg
Parameter
Maximum drain bias voltage Maximum drain bias current Gate bias voltage Maximum drain to gate voltage ( Vd– Vg) Maximum peak input power overdrive (2) Maximum channel temperature Operating temperature range Storage temperature range
Values
4.0 180 -2.0 to +0.4 +5 +15 175 -40 to +85 -55 to +125
Unit
V mA V V dBm °C °C °C
(1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s.
Ref. : DSCHR22912218 06-Aug.-02 2/6 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
12-17GHz Integrated Down Converter
Typical On-wafer M.