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CHR2291 Dataheets PDF



Part Number CHR2291
Manufacturers United Monolithic Semiconductors
Logo United Monolithic Semiconductors
Description 12-17GHz Integrated Down Converter
Datasheet CHR2291 DatasheetCHR2291 Datasheet (PDF)

CHR2291 12-17GHz Integrated Down Converter GaAs Monolithic Microwave IC Description The CHR2291 is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide range of applications, typically commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air .

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CHR2291 12-17GHz Integrated Down Converter GaAs Monolithic Microwave IC Description The CHR2291 is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide range of applications, typically commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. LO Q GM GB VDM VDL GX VGA RF I Main Features • • • • • • • 14 Typical on wafer measurement: Conversion Gain & Image suppression @ IF=1& 1.5GHz 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 11,0 12,0 13,0 14,0 15,0 16,0 17,0 18,0 Broadband performances : 12-17GHz 10 dB conversion gain 3.5dB noise figure -8dBm RF input power (1dB gain comp.) Low DC power consumption, [email protected] Chip size : 2.49 X 2.13 X 0.10 mm (dB) 2LO Frequency 10dBm LO input power RF Frequency (GHz) Main Characteristics Tamb. = 25°C Parameter Min Typ Max Unit FRF FLO FIF Gc RF frequency range LO frequency range IF frequency range Conversion gain 12 5.25 0.25 +10 17 7.75 1.5 GHz GHz GHz dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHR22912218 06-Aug.-02 1/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 12-17GHz Integrated Down Converter Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd = 3.5V ,Idl=50mA, Idm=50mA Symbol FRF FLO FIF Gc NF PLO Img Sup P1dB CHR2291 Parameter RF frequency range LO frequency range IF frequency range Conversion gain (1) Noise Figure (1) LO Input power Image Suppression Input power at 1dB gain compression Min 12 5.25 0.25 Typ Max 17 7.75 1.5 Unit GHz GHz GHz dB dB dBm dBc dBm +10 3.5 +10 15 -8 2.0:1 2.0:1 100 LO VSWR Input LO VSWR (1) RF VSWR Input RF VSWR (1) Id Bias current (2) mA (1) On Wafer measurements (2) Current source biasing network is recommended. Optimum performances for Idm= 50mA and Idl= 50mA Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Vd Id Vg Vdg Pin Tch Ta Tstg Parameter Maximum drain bias voltage Maximum drain bias current Gate bias voltage Maximum drain to gate voltage ( Vd– Vg) Maximum peak input power overdrive (2) Maximum channel temperature Operating temperature range Storage temperature range Values 4.0 180 -2.0 to +0.4 +5 +15 175 -40 to +85 -55 to +125 Unit V mA V V dBm °C °C °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHR22912218 06-Aug.-02 2/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 12-17GHz Integrated Down Converter Typical On-wafer M.


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