2SK741

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK741 DESCRIPTION ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Fast Switching Speed APPLICATIONS ·high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 250 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 7 A Total Dissipation@TC=25℃ 50 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 1.0 Thermal Resistance,Junction to Ambient 62.5 ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 2SK741 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A IGSS Gate Source Leakage Current VGS= ±16V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=200V; VGS= 0 VSD Diode Forward Voltage IF=7A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=4A; RL=7.5Ω toff Turn-off time MIN TYP MAX UNIT 250 V 2.0 4.0 V 0.40 0.55 Ω ±10 uA 250 uA 1.2 V 48 ns 60 ns 50 ns 120 ns isc website：www.i...