MDF10N60G

MDF10N60G N-channel MOSFET 600V MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  ID = 10A  RDS(ON) ≤ 0.7Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching D TO-220F MDF Series ` Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derateabove 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) May. 2011 Version 1.4 1 G S Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg Rating 600 ±30 10* 6.3* 40* 48 0.38 15.6 4.5 520 -55~150 Unit V V A A A W W/ oC mJ V/ns mJ oC Symbol RθJA RθJC Rating 62.5 2.6 Unit oC/W MagnaChip Semiconductor Ltd. MDF10N60G N-channel MOSFET 600V Ordering Information Part Number MDF10N60GTH Temp. Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta =25...