isc N-Channel MOSFET Transistor
2SK944
DESCRIPTION ·Drain Current –ID=22A@ TC=25℃ ·Drain Source Voltage-
: VDSS=250V(M...
isc N-Channel MOSFET
Transistor
2SK944
DESCRIPTION ·Drain Current –ID=22A@ TC=25℃ ·Drain Source Voltage-
: VDSS=250V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·high speed applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
250
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
22
A
Ptot
Total Dissipation@TC=25℃
150
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
0.83 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
50
℃/W
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isc N-Channel Mosfet
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(TH) Gate Threshold Voltage
VDS=10V; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=11A
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=250V; VGS= 0
VSD
Forward On-Voltage
IS= 22A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=11A; RL=11Ω
toff
Turn-off time
2SK944
MIN TYP. MAX UNIT
250
V
1.5
3.5
V
0.12 0.15 Ω
±100 nA
300 uA
1.9
V
25
50
ns
70
140
ns
45
90
ns
160 330
ns
Notice: ISC reserves the r...