2SK944

isc N-Channel MOSFET Transistor 2SK944 DESCRIPTION ·Drain Current –ID=22A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 250 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 22 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 50 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(TH) Gate Threshold Voltage VDS=10V; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=11A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=250V; VGS= 0 VSD Forward On-Voltage IS= 22A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=11A; RL=11Ω toff Turn-off time 2SK944 MIN TYP. MAX UNIT 250 V 1.5 3.5 V 0.12 0.15 Ω ±100 nA 300 uA 1.9 V 25 50 ns 70 140 ns 45 90 ns 160 330 ns Notice： ISC reserves the r...