2SK1063

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ·DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor’s B+ function ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 15 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W 2SK1063 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 10mA VGS(TH) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=8A IGSS Gate Source Leakage Current VGS= ±16V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 360V; VGS= 0 VSD) Forward On-Voltage ton Turn-on time toff Turn-off time IF= 15A; VGS= 0 VGS=10V;ID=8A; RL=3.75Ω 2SK1063 MIN TYP MAX UNIT 450 V 2.0 4.0 V 0....