isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage-
: VDSS=400V(Min) ·Min...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage-
: VDSS=400V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
DSS
Drain-Source Voltage (VGS=0)
400
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
10
A
Ptot
Total Dissipation@TC=25℃
50
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
0.83 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
35
℃/W
2SK1040
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isc N-Channel Mosfet
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=0; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=5A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=400V; VGS= 0
2SK1040
MIN TYP MAX UNIT
400
V
1.0
5.0
V
1.0
Ω
±100 nA
500
uA
Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC p...