isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500V(Min) ·Min...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
18
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0
℃/W
Rth j-a Thermal Resistance,Junction to Ambient
35
℃/W
2SK1018
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isc N-Channel Mosfet
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 8A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=500V; VGS= 0
VSD
Forward On-Voltage
IS=18A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=18A; RL=25Ω
toff
Turn-off time
2SK1018
MIN TYP. MAX UNIT
500
V
2.5
3.5
5.0
V
0.3 0.45
Ω
±100 nA
500 uA
1.18 1.70
V
100 150
ns
170 260
ns
80
120
ns
330 400
ns
Notice: ISC reserve...