512Mb Mobile LPDDR2 S4 SDRAM
IS43/46LD16320A IS43/46LD32160A
512Mb (x16, x32) Mobile LPDDR2 S4 SDRAM
FEATURES
• Low-voltage Core and I/O Power Su...
Description
IS43/46LD16320A IS43/46LD32160A
512Mb (x16, x32) Mobile LPDDR2 S4 SDRAM
FEATURES
Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V
High Speed Un-terminated Logic(HSUL_12) I/O Interface
Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O)
Four-bit Pre-fetch DDR Architecture
Multiplexed, double data rate, command/address inputs
Four internal banks for concurrent operation
Bidirectional/differential data strobe per byte of data (DQS/DQS#)
Programmable Read/Write latencies(RL/WL) and burst lengths(4,8 or 16)
ZQ Calibration
On-chip temperature sensor to control self refresh rate
Partial –array self refresh(PASR)
Deep power-down mode(DPD)
Operation Temperature Commercial (TC = 0°C to 85°C) Industrial (TC = -40°C to 85°C) Automotive, A1 (TC = -40°C to 85°C) Automotive, A2 (TC = -40°C to 105°C)
OPTIONS
Configuration: − 32Mx16 (8M x 16 x 4 banks) − 16Mx32 (4M x 32 x 4 banks) Package: − 134-ball BGA for x16 / x32 − 168-ball PoP BGA for x32
DESCRIPTION
MAY 2016
The IS43/46LD16320A/32160A is 512Mbit CMOS LPDDR2 DRAM. The device is organized as 4 banks of 8Meg words of 16bits or 4Meg words of 32bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product of...
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