UPA863TS

DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES Low voltage operation 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 6-pin super lead-less minimold package BUILT-IN TRANSISTORS Flat-lead 3-pin thin-type ultra super minimold part No. Q1 2SC5436 Q2 2SC5800 ORDERING INFORMATION Part Number µPA863TS µPA863TS-T3 Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form 8 mm wide embossed taping Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10333EJ02V0DS (2nd edition) Date Published September 2003 CP(K) Printed in Japan The mark  shows major...