Document
VCE = IC =
1700 V 2400 A
ABB HiPakTM
IGBT Module
5SNA 2400E170100
• Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for
good EMC
• Industry standard package • High power density • AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal resistance
Doc. No. 5SYA1555-03 Oct 06
Maximum rated values 1)
Parameter
Symbol Conditions
min max Unit
Collector-emitter voltage
VCES VGE = 0 V, Tvj ≥ 25 °C
DC collector current
IC Tc = 80 °C
Peak collector current
ICM tp = 1 ms, Tc = 80 °C
Gate-emitter voltage
VGES
Total power dissipation
Ptot Tc = 25 °C, per switch (IGBT)
DC forward current
IF
Peak forward current Surge current
IGBT short circuit SOA
IFRM
IFSM
VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave
tpsc
VCC = 1200 V, VCEMCHIP ≤ 1700 V VGE ≤ 15 V, Tvj ≤ 125 °C
Isolation voltage
Visol 1 min, f = 50 Hz
Junction temperature
Tvj
Junction operating temperature Tvj(op)
Case temperature
Tc
Storage temperature
Tstg
Mounting torques 2)
Ms Base-heatsink, M6 screws Mt1 Main terminals, M8 screws
Mt2 Auxiliary terminals, M4 screws
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
1700 2400 4800 -20 20 14300 2400 4800
V A A V W A A
20000 A
10 µs
4000 V 150 °C -40 125 °C -40 125 °C -40 125 °C 46 8 10 Nm 23
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SNA 2400E170100
IGBT characteristic values 3)
Parameter
Symbol Conditions
Collector (-emitter) breakdown voltage
V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C
Collector-emitter 4) saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Short circuit current Module stray inductance Resistance, terminal-chip
VCE sat
ICES IGES VGE(TO) Qge Cies Coes Cres td(on)
tr
td(off)
tf
Eon
Eoff
ISC Lσ CE RCC’+EE’
IC = 2400 A, VGE = 15 V
Tvj = 25 °C Tvj = 125 °C
VCE = 1700 V, VGE = 0 V
Tvj = 25 °C Tvj = 125 °C
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C
IC = 240 mA, VCE = VGE, Tvj = 25 °C
IC = 2400 A, VCE = 900 V, VGE = -15 V .. 15 V
VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C
VCC = 900 V, IC = 2400 A, RG = 0.56 Ω, VGE = ±15 V, Lσ = 60 nH, inductive load
Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C
VCC = 900 V, IC = 2400 A, RG = 0.56 Ω, VGE = ±15 V,
Lσ = 60 nH, inductive load
Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C
VCC = 900 V, IC = 2400 A, VGE = ±15 V, RG = 0.56 Ω, Lσ = 60 nH, inductive load
Tvj = 25 °C Tvj = 125 °C
VCC = 900 V, IC = 2400 A, VGE = ±15 V, RG = 0.56 Ω, Lσ = 60 nH, inductive load
Tvj = 25 °C Tvj = 125 °C
tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 1200 V, VCEM CHIP ≤ 1700 V
TC = 25 °C TC = 125 °C
3) Characteristic values according to IEC 60747 – 9 4) Collector-emitter saturation voltage is given at chip level
min typ max
1700 2.0 2.3 2.3 2.6
-500 4.5
2.6 2.9 12 120 500 6.5
22
228 22.1 9.6 320 320 270 275 1000 1090 250 265 495
700
850
1000
11100
10 0.06 0.085
Unit V V V mA mA nA V µC
nF
ns
ns
ns
ns
mJ
mJ
A nH mΩ
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1555-03 Oct 06
page 2 of 9
5SNA 2400E170100
Diode characteristic values 5)
Parameter
Symbol Conditions
Forward voltage 6)
VF IF = 2400 A
Reverse recovery current
Irr
Recovered charge
Qrr
Reverse recovery time
trr
Reverse recovery energy
Erec
5) Characteristic values according to IEC 60747 – 2 6) Forward voltage is given at chip level
VCC = 900 V, IF = 2400 A,
VGE = ±15 V, RG = 0.56 Ω
Lσ = 60 nH inductive load
Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C
min typ max Unit
1.65 2.0 1.7 2.0
V
1520 1880
A
590 1025
µC
580 ns
870
420 mJ
720
Thermal properties 7)
Parameter
Symbol Conditions
IGBT thermal resistance junction to case
Rth(j-c)IGBT
Diode thermal resistance junction to case
Rth(j-c)DIODE
IGBT thermal resistance 2) case to heatsink
Rth(c-s)IGBT IGBT per switch, λ grease = 1W/m x K
Diode thermal resistance 7) case to heatsink
Rth(c-s)DIODE Diode per switch, λ grease = 1W/m x K
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
min typ max Unit 0.007 K/W
0.012 K/W
0.009
K/W
0.018
K/W
Mechanical properties 7)
Parameter Dimensions
Symbol Conditions L x W x H Typical , see outline drawing
min typ max Unit 190 x 140 x 38 mm
Clearance distance in air
da
according to IEC 60664-1 Term. to base: 23
and EN 50124-1
Term. to term: 19
mm
Surface creepage distance
ds
according to IEC 60664-1 Term. to base: 33
and EN 50124-1
Term. to term: 32
mm
Mass
m
1500
g
7) Thermal and mechanical properties .