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5SNA2400E170100 Dataheets PDF



Part Number 5SNA2400E170100
Manufacturers ABB
Logo ABB
Description IGBT Module
Datasheet 5SNA2400E170100 Datasheet5SNA2400E170100 Datasheet (PDF)

VCE = IC = 1700 V 2400 A ABB HiPakTM IGBT Module 5SNA 2400E170100 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power cycling capability • AlN substrate for low thermal resistance Doc. No. 5SYA1555-03 Oct 06 Maximum rated values 1) Parameter Symbol Conditions min max Unit Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C DC collector current IC Tc = 80 °C Peak collector cu.

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VCE = IC = 1700 V 2400 A ABB HiPakTM IGBT Module 5SNA 2400E170100 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power cycling capability • AlN substrate for low thermal resistance Doc. No. 5SYA1555-03 Oct 06 Maximum rated values 1) Parameter Symbol Conditions min max Unit Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C DC collector current IC Tc = 80 °C Peak collector current ICM tp = 1 ms, Tc = 80 °C Gate-emitter voltage VGES Total power dissipation Ptot Tc = 25 °C, per switch (IGBT) DC forward current IF Peak forward current Surge current IGBT short circuit SOA IFRM IFSM VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave tpsc VCC = 1200 V, VCEMCHIP ≤ 1700 V VGE ≤ 15 V, Tvj ≤ 125 °C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature Tvj(op) Case temperature Tc Storage temperature Tstg Mounting torques 2) Ms Base-heatsink, M6 screws Mt1 Main terminals, M8 screws Mt2 Auxiliary terminals, M4 screws 1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 1700 2400 4800 -20 20 14300 2400 4800 V A A V W A A 20000 A 10 µs 4000 V 150 °C -40 125 °C -40 125 °C -40 125 °C 46 8 10 Nm 23 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SNA 2400E170100 IGBT characteristic values 3) Parameter Symbol Conditions Collector (-emitter) breakdown voltage V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C Collector-emitter 4) saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current Module stray inductance Resistance, terminal-chip VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres td(on) tr td(off) tf Eon Eoff ISC Lσ CE RCC’+EE’ IC = 2400 A, VGE = 15 V Tvj = 25 °C Tvj = 125 °C VCE = 1700 V, VGE = 0 V Tvj = 25 °C Tvj = 125 °C VCE = 0 V, VGE = ±20 V, Tvj = 125 °C IC = 240 mA, VCE = VGE, Tvj = 25 °C IC = 2400 A, VCE = 900 V, VGE = -15 V .. 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C VCC = 900 V, IC = 2400 A, RG = 0.56 Ω, VGE = ±15 V, Lσ = 60 nH, inductive load Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C VCC = 900 V, IC = 2400 A, RG = 0.56 Ω, VGE = ±15 V, Lσ = 60 nH, inductive load Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C VCC = 900 V, IC = 2400 A, VGE = ±15 V, RG = 0.56 Ω, Lσ = 60 nH, inductive load Tvj = 25 °C Tvj = 125 °C VCC = 900 V, IC = 2400 A, VGE = ±15 V, RG = 0.56 Ω, Lσ = 60 nH, inductive load Tvj = 25 °C Tvj = 125 °C tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 1200 V, VCEM CHIP ≤ 1700 V TC = 25 °C TC = 125 °C 3) Characteristic values according to IEC 60747 – 9 4) Collector-emitter saturation voltage is given at chip level min typ max 1700 2.0 2.3 2.3 2.6 -500 4.5 2.6 2.9 12 120 500 6.5 22 228 22.1 9.6 320 320 270 275 1000 1090 250 265 495 700 850 1000 11100 10 0.06 0.085 Unit V V V mA mA nA V µC nF ns ns ns ns mJ mJ A nH mΩ ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1555-03 Oct 06 page 2 of 9 5SNA 2400E170100 Diode characteristic values 5) Parameter Symbol Conditions Forward voltage 6) VF IF = 2400 A Reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy Erec 5) Characteristic values according to IEC 60747 – 2 6) Forward voltage is given at chip level VCC = 900 V, IF = 2400 A, VGE = ±15 V, RG = 0.56 Ω Lσ = 60 nH inductive load Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C min typ max Unit 1.65 2.0 1.7 2.0 V 1520 1880 A 590 1025 µC 580 ns 870 420 mJ 720 Thermal properties 7) Parameter Symbol Conditions IGBT thermal resistance junction to case Rth(j-c)IGBT Diode thermal resistance junction to case Rth(j-c)DIODE IGBT thermal resistance 2) case to heatsink Rth(c-s)IGBT IGBT per switch, λ grease = 1W/m x K Diode thermal resistance 7) case to heatsink Rth(c-s)DIODE Diode per switch, λ grease = 1W/m x K 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 min typ max Unit 0.007 K/W 0.012 K/W 0.009 K/W 0.018 K/W Mechanical properties 7) Parameter Dimensions Symbol Conditions L x W x H Typical , see outline drawing min typ max Unit 190 x 140 x 38 mm Clearance distance in air da according to IEC 60664-1 Term. to base: 23 and EN 50124-1 Term. to term: 19 mm Surface creepage distance ds according to IEC 60664-1 Term. to base: 33 and EN 50124-1 Term. to term: 32 mm Mass m 1500 g 7) Thermal and mechanical properties .


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