IGBT Module
VCE = IC =
6500 V 600 A
ABB HiPakTM
IGBT Module
5SNA 0600G650100
• Low-loss, rugged SPT chip-set
• Smooth switching S...
Description
VCE = IC =
6500 V 600 A
ABB HiPakTM
IGBT Module
5SNA 0600G650100
Low-loss, rugged SPT chip-set
Smooth switching SPT chip-set for good EMC
High insulation package
AlSiC base-plate for high power cycling capability
AlN substrate for low thermal resistance
Doc. No. 5SYA1558-02 Jan 06
Maximum rated values 1)
Parameter
Symbol Conditions
min max Unit
Collector-emitter voltage
VCES VGE = 0 V, Tvj ≥ 25 °C
DC collector current
IC Tc = 85 °C
Peak collector current
ICM tp = 1 ms, Tc = 85 °C
Gate-emitter voltage
VGES
-20
Total power dissipation
Ptot Tc = 25 °C, per switch (IGBT)
DC forward current
IF
Peak forward current Surge current
IGBT short circuit SOA
IFRM
IFSM
VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave
tpsc
VCC = 4400 V, VCEMCHIP ≤ 6500 V VGE ≤ 15 V, Tvj ≤ 125 °C
Isolation voltage
Visol 1 min, f = 50 Hz
Junction temperature
Tvj
Junction operating temperature Tvj(op)
-40
Case temperature
Tc
-40
Storage temperature
Tstg
-40
Ms Base-heatsink, M6 screws
4
Mounting torques 2)
Mt1 Main terminals, M8 screws
8
Mt2 Auxiliary terminals, M4 screws
2
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
6500 600 1200 20 11900 600 1200
V A A V W A A
6000 A
10 µs
10200 V 125 °C 125 °C 125 °C 125 °C 6 10 Nm 3
5SNA 0600...
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