IXTP48N20T

TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXTA48N20T IXTP48N20T IXTQ48N20T Symbol VDSS VDGR VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD MFCd Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Force (TO-263) Mounting Torque (TO-220 & TO-3P) TO-263 TO-220 TO-3P Maximum Ratings 200 200 V V ± 30 V 48 A 130 A 5A 500 mJ 3 250 -55 ... +175 175 -55 ... +175 300 260 10..65/2.2..14.6 1.13/10 2.5 3.0 5.5 V/ns W °C °C °C °C °C Nm/lb.in Nm/lb.in g g g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 200 V 2.5 4.5 V ± 100 nA 5 μA 250 μA 40 50 mΩ VDSS = 200V ID25 = 48A RDS(on) ≤ 50mΩ TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) GD S TO-3P (IXTQ) D (Tab) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Rectifier z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode Power Supplies z DC Choppers z AC M...