IXTP460P2

PolarP2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXTA) IXTA460P2 IXTP460P2 IXTQ460P2 IXTH460P2 TO-220AB (IXTP) VDSS ID25 RDS(on) trr(typ) = = ≤ = 500V 24A 270mΩ 400ns TO-3P (IXTQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight G S D (Tab) GD S D (Tab) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient Maximum Ratings 500 500 ± 30 ± 40 V V V V TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 24 50 12 750 15 480 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W °C °C °C Maximum Lead Temperature for Soldering Plastic Body for 10s 300 °C 260 °C Mounting Force TO-263 10..65 / 2.2..14.6 Mounting Torque (TO-220, TO-3P & TO-247) 1.13 / 10 Nm/lb.in. Nm/lb.in. TO-263 TO-220 TO-3P TO-247 2.5 g 3.0 g 5.5 g 6.0 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 500 V 2.5 4.5 V ± 100 nA 25 μA 250 μA 270 mΩ G D S D (Tab) TO-247 (IXTH) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain Features z Avalanche Rated z Fast Intrinsic Diode z Dynamic dv/dt Rated z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings Applications z...