HFS50N06A

HFS50N06A Oct 2015 HFS50N06A 60V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 27 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : ȍ(Typ.) @VGS=10V ‰ 100% Avalanche Tested BVDSS = 60 V RDS(on) typ = 18 Pȍ ID = 50 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25୅) - Derate above 25୅ 60 50.0 * 35.4 * 200 * ρ25 490 50 12 48 0.32 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +175 300 * Drain current limited by maximum junction temperature Units V A A A V mJ A mJ W W/୅ ୅ ୅ Thermal Resistance Characteristics Symbol RșJC RșJA Parameter Junction-to-Case Junction-to-Ambient Typ. --- Max. 3.1 62.5 Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝΀ΔΥ͑ͣͦ͑͢͡ HFS50N06A Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS Gate Thres...