HFD630A

HFD630A_HFU630A August 2015 HFD630A / HFU630A 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 9.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 12 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ7\S #9GS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD630A 1 2 3 HFU630A 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation (TA = 25୅) Power Dissipation (TC = 25୅) - Derate above 25୅ 200 9.0 * 5.7 * 36 * ρ30 232 9.0 9.5 2.5 45 0.36 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +150 300 * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol Parameter RșJC Junction-to-Case RșJA Junction-to-Ambient* RșJA Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ. ---- Max. 2.77 50 110 Units V A A A V mJ A mJ W W W/୅ ୅ ୅ Units ୅/W క͑΄Ͷ;ͺ͹...