HFU2N65F

HFD2N65F_HFU2N65F July 2015 HFD2N65F / HFU2N65F 600V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 2 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 6.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ7\S#9GS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N65F 1 2 3 HFU2N65F 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation (TA = 25୅) Power Dissipation (TC = 25୅) - Derate above 25୅ 650 2 1.3 8 ρ30 110 2 4.2 2.5 42 0.34 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +150 300 Units V A A A V mJ A mJ W W W/୅ ୅ ୅ Thermal Resistance Characteristics Symbol Parameter RșJC Junction-to-Case RșJA Junction-to-Ambient* RșJA Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ. ---- Max. 2.98 50 110 Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͢͡ HFD2N65F_HFU2N65F Electrical Characteristics ...