HFA20N50U

HFA20N50U HFA20N50U 500V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 58 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ7\S #9GS=10V ‰ 100% Avalanche Tested May 2014 BVDSS = 500 V RDS(on) typ ȍ ID = 20 A TO-247 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 500 20 12.5 80 ρ30 950 20 10 4.5 PD Power Dissipation (TC = 25୅) - Derate above 25୅ 100 0.8 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +150 300 Thermal Resistance Characteristics Symbol RșJC RșJA Junction-to-Case Parameter Junction-to-Ambient Typ. -- -- Max. 1.28 40 Units V A A A V mJ A mJ V/ns W W/୅ ୅ ୅ Units ఁ͠Έ͑ క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΪ͑ͣͥ͑͢͡ HFA20N50U Package Marking and Odering Information Device Marking HFA20N50U HFA20N50U Week Marking YWWX YWWXg Package TO-247 TO-247 Packing Tube Tube Quantity 30 30 ...