isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=1A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Min) ·Fast...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current –ID=1A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage, high speed power switching
applications such as switching
regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE NIT
VDSS
Drain-Source Voltage (VGS=0)
800
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
1
A
Ptot
Total Dissipation@TC=25℃
45
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0
℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
2SK808
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=25 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 0.7A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=640V; VGS= 0
ton
Turn-on time
toff
Turn-off time
VGS=10V;ID=0.7A; RL=285Ω
2SK808
MIN TYP MAX UNIT
800
V
1.0
5.0
V
4.7
7.0
Ω
±1
uA
0.1
mA
35
ns
110
ns
Notice: ISC reserves the r...