isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Fas...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage, high speed power switching
applications such as switching
regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
600
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
2
A
Ptot
Total Dissipation@TC=25℃
40
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0
℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
2SK770
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isc N-Channel Mosfet
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS=25 V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 1A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=480V; VGS= 0
2SK770
MIN TYP MAX UNIT
600
V
1.0
5.0
V
3.5
5.0
Ω
±1
uA
100
uA
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