isc N-Channel MOSFET Transistor
2SK636
FEATURES ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for high voltage, high speed power switching
applications such as switching regulators, converters, solenoid ...
