BUY57

isc Silicon NPN Power Transistor BUY57 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 125V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.3V@ IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general switching applications at higher outputs. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCES Collector-Emitter Voltage 150 V VCEO Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 25 A IB Base Current-Continuous PC Collector Power Dissipation @TC≤25℃ Tj Junction Temperature 5 A 117 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.28 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 1.25A VBE(on)-1 Base-Emitter On Voltage IC= 10A; VCE= 1.5V VBE(on)-2 Base-Emitter On Voltage IC= 12A; VCE= 1.5V VBE(on)-2 Base-Emitter On Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC...