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BUY56

Part Number	BUY56
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jun 26, 2016
Detailed Description	isc Silicon NPN Power Transistor BUY56 DESCRIPTION · ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ...
Datasheet	BUY56 PDF File

Overview

isc Silicon NPN Power Transistor BUY56 DESCRIPTION · ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.
) ·Low Collector Saturation Voltage- : VCE(sat)= 1.
5V@ IC= 7A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general switching applications at higher outputs.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 250 V VCES Collector-Emitter Voltage 250 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipatio...

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