BUY24

isc Silicon NPN Power Transistor BUY24 DESCRIPTION · ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use switching and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC＜75℃ Tj Junction Temperature 5 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 5.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1m A; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(sat)-2 Base-Emitter Saturation Voltage ICBO Collector Cutoff Current hFE-1 DC Current Gain IC= 5A; IB= 0.5A VCB=60V; IE= 0 VC...