isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=60V(Min) ·Fast Switching Speed ·Minimum Lot-t...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=60V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VGS
Gate-Source Voltage
Drain
BUK445-60A
ID
Current-continuous
@ TC=25℃
BUK445-60B
Ptot
Total Dissipation@TC=25℃
Tj
Max. Operating Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
60
V
±30
V
21 A
20
30
W
150
℃
150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
4.17 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
55 ℃/W
BUK445-60A/B
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
BUK445-60A/B
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA
VGS(th) RDS(on)
Gate Threshold Voltage
VDS=VGS; ID=1mA
Drain-Source On-stage Resistance
VGS=10V; ID=20A
BUK445-60A BUK445-60B
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=60V; VGS= 0
VSD
Diode Forward Voltage
IF=21A; VGS=0
Gfs
Forward Transconductance
VDS= 25V；ID= 20A
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=3A;RGS...
