isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High Voltage: VCBO= 330V(Min) ·Low Saturation Voltage-
: VCE(s...
isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·High Voltage: VCBO= 330V(Min) ·Low Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s
and CRT’s.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
330
V
VCEV
Collector-Emitter Voltage
330
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
15
A
IB
Base Current
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
2
A
60
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
BU807
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc Silicon
NPN Darlington Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0
VCE(sat)* Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA
VBE(sat)* Base-Emitter Saturation Voltage
IC= 5A; IB= 50mA
ICES
Collector Cutoff Current
VCE= 330V; VBE= 0
ICEV
Collector Cutoff Current
VCE= 330V; VBE(off)= 6V
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
VECF*
C-E Diode Forward Voltage
IF= 4A
*:Pulse test:pulse width≤300us,duty cycle≤1.5%
BU807
MIN TYP. MAX UNIT
150
V
1.5
V
2.4
V
0.1 mA
0.1 mA
3.0 mA
2.0
V
NOTICE: ...