isc Silicon NPN Power Transistor
BU508AT
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min) ·H...
isc Silicon
NPN Power
Transistor
BU508AT
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min) ·High Power Dissipation-
: PD= 100W@TC= 25℃ ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in large screen color deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage(VBE= 0) 1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
8
A
ICM
Collector Current-Peak
15
A
IB
Base Current- Continuous
4
A
IBM
Base Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
6
A
60
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.2 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
BU508AT
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
700
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 4.5A; IB= 2.0A
VCE= 1300V; VBE= 0 VCE= 1300V; VBE= 0; TC=125℃
VEB= 5.0V; IC= 0
1.5
V
0.1 2.0
mA
10 mA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
6
30...