INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)=...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V (Min) ·High Power Dissipation-
: PD= 100W@TC= 25℃
APPLICATIONS ·Designed for horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage(VBE= 0) 1500
V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current- Continuous
5A
ICM Collector Current-Peak
16 A
IB Base Current- Continuous
4A
IBM Base Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
6A 100 W 150 ℃ -65~150 ℃
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W
isc Product Specification
BU508A-M
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
BU508A-M
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4.5A; IB= 2.0A
ICES Collector Cutoff Current
VCE= 1500V ; VBE= 0
IEBO Emitter Cutoff Current
VEB= 6.0V ; IC= 0
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 5V
hFE-2
DC Current Gain
IC= 4A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 5V;
Switching time...