isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain
-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1V(Max)@ IC = 4A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAX...
