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BD956 Dataheets PDF



Part Number BD956
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon PNP Power Transistor
Datasheet BD956 DatasheetBD956 Datasheet (PDF)

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= -500mA ·Complement to Type BD955 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base V.

  BD956   BD956


BD954 BD956 BDT60


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