DatasheetsPDF.com

BD950

Part Number	BD950
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Jun 26, 2016
Detailed Description	isc Silicon PNP Power Transistor BD950 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Cur...
Datasheet	BD950 PDF File

Overview

isc Silicon PNP Power Transistor BD950 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= -500mA ·Complement to Type BD949 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 40 W 150 ℃ Tstg Storage Tempera...

Similar Datasheet

BD900 PNP Transistor - INCHANGE
BD900 PNP Transistor - Power Innovations Limited
BD900 (BD900 / BD902) SILICON POWER TRANSISTOR - SavantIC
BD900 Silicon NPN Power Transistors - Comset Semiconductors
BD9001F Flexible Step-Down Switching Regulator - Rohm
BD9002HFP Flexible Step-Down Switching Regulator - Rohm
BD900A PNP Transistor - Power Innovations Limited
BD900A SILICON POWER TRANSISTOR - SavantIC
BD900A PNP Transistor - INCHANGE
BD901 NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)