BD949F

isc Silicon NPN Power Transistor BD949F/951F/953F/955F DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 500mA ·Complement to Type BD950F/952F/954F/956F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD949F 60 BD951F 80 VCBO Collector-Base Voltage V BD953F 100 BD955F 120 BD949F 60 BD951F 80 VCEO Collector-Emitter Voltage V BD953F 100 BD955F 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 22 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 8.12 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD949F/951F/953F/955F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD949F VCEO(SUS) Collector-Emitter Sustaining Voltage BD951F BD953F IC= 30mA ; IB= 0 BD955F VCE(sat) VBE(on) ICBO ICEO Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current IC= 2A; VCE= 4V VCB= VCBOmax; IE= 0 VCB= 1/2VCBOmax; IE= 0,TJ=150℃ VCE= VCEOmax; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 ...